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In-place Characterization of On-state Voltage for SiC …
WebTable 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 68 A ISDM (1) Source-drain current (pulsed) - 260 A VSD (2) Forward on voltage VGS = 0 V, ISD = 68 A - 1.6 V trr Reverse recovery time ISD = 68 A, di/dt = 100 A/μs, VDD = 60 V (see Figure 15. Test circuit for inductive load switching and diode … WebOct 25, 2024 · STW77N65M5 Si MOSFET 650 TO-247-3 0.150 IPW65R022CFD7A Si MOSFET 650 TO-247-3 0.107 IPP65R050CFD7A Si MOSFET 650 TO-220 0.126 C2M0080120D SiC MOSFET 1200 TO-247-3 0.239 C3M0025065K SiC MOSFET 650 TO-247-4 0.156 In this work, the experimental tests are performed on the device C2M0080120D, … dhp strategic plan supplement
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